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| RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics (trr < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49038. Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RURD660 RURD660S PACKAGE TO-251 TO-252 BRAND RUR660 RUR660 Packaging JEDEC STYLE TO-251 ANODE CATHODE (FLANGE) CATHODE NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A. Symbol K JEDEC STYLE TO-252 CATHODE (FLANGE) A CATHODE ANODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURD660 RURD660S 600 600 600 6 12 60 50 10 -65 to 175 300 260 UNITS V V V A A A W mJ oC oC oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG (c)2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B RURD660, RURD660S Electrical Specifications SYMBOL VF TC = 25oC, Unless Otherwise Specified TEST CONDITION IF = 6A IF = 6A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A MIN TYP 28 16 150 25 MAX 1.5 1.2 100 500 55 60 3 UNITS V V A A ns ns ns ns nC pF oC/W Typical Performance Curves 30 500 IR , REVERSE CURRENT (A) 100 175oC IF , FORWARD CURRENT (A) 10 10 1 100oC 100oC 175oC 1 25oC 0.1 25oC 0.01 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) 0.001 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B RURD660, RURD660S Typical Performance Curves 50 TC = 25oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 40 trr 30 ta 20 tb 75 (Continued) 90 TC = 100oC, dIF/dt = 200A/s 60 45 30 trr ta tb 10 15 0 0.5 0 0.5 1 IF , FORWARD CURRENT (A) 6 1 IF , FORWARD CURRENT (A) 6 FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT TC = 175oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 80 trr 60 IF(AV) , AVERAGE FORWARD CURRENT (A) 100 6 5 DC 4 SQ. WAVE 3 2 1 0 145 40 ta tb 20 0 0.5 1 IF , FORWARD CURRENT (A) 6 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 75 CJ , JUNCTION CAPACITANCE (pF) 60 45 30 15 0 0 50 100 VR , REVERSE VOLTAGE (V) 150 200 FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B RURD660, RURD660S Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 8. trr TEST CIRCUIT I = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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